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XN01457|XN1457 Datasheet

  • XN01457|XN1457

  • Composite Device - Composite Transistors

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  • ETC

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Composite Transistors
XN01457
Silicon PNP epitaxial planar type
For general amplification
鈻?/div>
Features
鈥?/div>
Two elements incorporated into one package
(Emitter-coupled transistors)
鈥?/div>
Reduction of the mounting area and assembly cost by one half
3
2.90
+0.20
鈥?.05
1.9
鹵0.1
(0.95) (0.95)
4
5
Unit: mm
0.16
+0.10
鈥?.06
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
2
0.30
+0.10
鈥?.05
10藲
1
鈻?/div>
Basic Part Number
鈥?/div>
2SB1693
脳
2
1.1
+0.2
鈥?.1
(0.65)
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Rating
鈭?0
鈭?0
鈭?5
鈭?/div>
0.5
鈭?
300
150
鈭?5
to
+150
Unit
V
V
V
A
A
mW
擄C
擄C
Tr2
1: Collector (Tr1)
2: Collector (Tr2)
3: Base (Tr2)
EIAJ: SC-74A
0 to 0.1
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
4: Emitter
5: Base (Tr1)
Mini5-G1 Package
Marking Symbol: 4Y
Internal Connection
3
4
5
1.1
+0.3
鈥?.1
Tr1
2
1
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Forward current transfer ratio
*1
h
FE
ratio
*1, 2
Symbol
V
CBO
V
CEO
V
EBO
h
FE1
h
FE2
h
FE(Small
/Large)
*1
Conditions
I
C
= 鈭?0 碌A(chǔ),
I
E
=
0
I
C
= 鈭?
mA, I
B
=
0
I
E
= 鈭?0 碌A(chǔ),
I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?00
mA
V
CE
= 鈭?
V, I
C
= 鈭?00
mA
V
CE
= 鈭?
V, I
C
= 鈭?00
mA
I
C
= 鈭?00
mA, I
B
= 鈭?0
mA
I
C
= 鈭?/div>
0.5 A, I
B
= 鈭?5
mA
V
CB
= 鈭?
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= 鈭?0
V, I
E
=
0, f
=
1 MHz
Min
鈭?0
鈭?0
鈭?5
160
100
0.50
Typ
Max
Unit
V
V
V
錚?/div>
錚?/div>
560
0.99
鈭?0
鈭?10
170
16
鈭?00
鈭?00
Collector-emitter saturation voltage
V
CE(sat)
f
T
C
ob
mV
Transition frequency
Collector output capacitance
(Common base, input open circuited)
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Ratio between 2 elements
0.4
鹵0.2
5藲
Publication date: December 2003
SJJ00260BED
1

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